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About

Dongguan Pingjing Semi Technology Co., LTD was founded in 2016, mainly engaged in the semiconductor discrete device research and development。

About us

Product

MOSFET

N-MOSFET
P-MOSFET
Dual N-MOSFET
Dual P-MOSFET
N+PMOSFET
Depletion Mode MOSFET

IC

Darlington Transistor Array Circuit
LED Driver
DC-DC
Low Dropout Regulators
3-Terminal Voltage Regulator
Voltage Regulator
Lithium-ion Battery Charger IC
Lithium-ion Battery Protection IC
Operational Amplifier/Comparator
USB Charging Port Controller

Transistor

Transistor
Darlington Transistor
Digital Transistor
Silicon Controlled Rectifier

Diodes

Silicon Bidirectional Trigger Diodes
Bridge Rectifiers
General Rectifiers
Fast Recovery Rectifiers
Superfast Recovery Rectifiers
Zener Diodes
Switching Diodes
Schottky Barrier Rectifiers
Transient Voltage Suppressors/ElertroStatic Discharged Protection

MOSFET+Transistor

Company integrating research and development, production, sales, professional committed to the power semiconductor chips and components manufacturing, integrated circuit packaging test in the fields of industrial development.

Application

Quality

Dongguan Pingjing Semi Technology Co., LTD for several years by China semiconductor industry association as ten strong enterprise China semiconductor power device.

Quality System

Environmentalreport

Reliabilitytest

Responsibility

Dongguan Pingjing Semi Technology Co., LTD was founded in 2016, mainly engaged in the semiconductor discrete device research and development。

Responsibility

Conflict Minerals Policy

policy

Environmental protection public information

WorkshoPenvironment

Plastic sealing products display

News

Focus on exploring the flat crystal microelectronics science and technology information and the latest product release information .

News

產品類

Recruitment

Dongguan Pingjing Semi Technology Co., LTD was founded in 2016, mainly engaged in the semiconductor discrete device research and development。

Recruitment

包裝技術員助理一名

Contact

Dongguan Pingjing Semi Technology Co., LTD was founded in 2016, mainly engaged in the semiconductor discrete device research and development。

Contact

大中華區en

Specification	Type	V_RRM	I_F(AV)	I_FSM	V_F	I_R	C_J	Package
(V)	(A)	(A)	(V)	at IF(mA)	(mA)	(pF)
		ALL 100 120 150 20 200 30 40 45 60 70 80	ALL 0.07 0.15 0.2 0.35 0.5 0.03 0.07 0.15 0.2 0.5 1 10 15 2 20 3 5 6 7.5 8	ALL 0.1 0.3 0.6 0.75 0.1 0.2 0.25 0.5 0.6 1 100 120 150 175 2 200 22 25 250 30 40 45 5.5 50 55 80 9 90	ALL 0.37 0.39 0.43 0.45 0.5 0.52 0.55 0.6 0.62 0.65 0.7 0.75 0.8 0.85 0.88 0.9 0.92 0.95 0.37(Max.) 0.39 0.4 0.43 0.45 0.47 0.5 0.51 0.55 0.60 0.7 0.75 0.80 0.88 0.9 0.92 0.95 1	ALL 1 10 100 1000 10000 15 15000 20 200 2000 20000 3000 40 500 5000 6000 7500 8000	ALL - 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.05 0.1 0.2 0.25 0.3 0.5 0.8 0.0001 0.0002 0.0005(Max.) 0.001 0.002 0.01 0.03 0.05 0.075 0.1 0.25 0.5 1	ALL - 10 110 120 130 160 180 2 2(Typ.) 20 200 220 250 28 290 300 35 350 400 450 5 50 500 600 700 80 800 900	ALL DFN1x0.6-2L SMA SMAF SMB SMBF SMC SOD-123 SOD-123FL SOD-123W SOD-323 SOD-323FL SOD-323W SOD-523 SOT-23 TO-220ABW TO-220FW TO-252 TO-263 TO-263W
	1N5817WS	20	1	9	0.45	1000	1	110	SOD-323
	1N5818WS	30	1	9	0.55	1000	1	110	SOD-323
	1N5819WS	40	1	9	0.6	1000	1	110	SOD-323
	SS820B-PJ	200	8	150	0.85	8000	1	700	SMB
	SS815B-PJ	150	8	150	0.85	8000	1	700	SMB
	SS812B-PJ	120	8	150	0.85	8000	1	700	SMB
	SS810B-PJ	100	8	150	0.85	8000	1	700	SMB
	SS88B-PJ	80	8	150	0.85	8000	1	700	SMB
	SS86B-PJ	60	8	150	0.7	8000	1	700	SMB
	SS84B-PJ	40	8	150	0.55	8000	1	900	SMB
	SS82B-PJ	20	8	150	0.45	8000	1	900	SMB
	SSL545F-PJ	45	5	150	0.45	5000	0.5	700	SMAF
	SSL310F-PJ	100	3	100	0.6	3000	0.1	180	SMAF
	SSL26F-PJ	60	2	50	0.52	2000	0.3	130	SMAF
	SSL24F-PJ	40	2	50	0.45	2000	0.5	290	SMAF
	SSL16F-PJ	60	1	30	0.5	1000	0.2	80	SMAF
	SSL14F-PJ	40	1	30	0.5	1000	0.2	180	SMAF
	SSL12F-PJ	20	1	30	0.45	1000	0.3	180	SMAF
	BAT54WB	30	0.2	0.6	1	100	0.002	10	SOD-323W
	RB521S-30	30	0.2	1	0.5	200	0.03	-	SOD-523

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MOSFET

IC

Transistor

Diodes

MOSFET+Transistor

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